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Authordc.contributor.authorBernède, J. C. 
Authordc.contributor.authorMartínez Concha, Francisco es_CL
Authordc.contributor.authorNeculqueo, G. es_CL
Authordc.contributor.authorCattin, L. es_CL
Admission datedc.date.accessioned2010-01-28T15:29:43Z
Available datedc.date.available2010-01-28T15:29:43Z
Publication datedc.date.issued2008-01
Cita de ítemdc.identifier.citationPHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS Volume: 2 Issue: 1 Pages: 10-12 Published: JAN 2008en_US
Identifierdc.identifier.issn1862-6254
Identifierdc.identifier.other10.1002/pssr.200701217
Identifierdc.identifier.urihttps://repositorio.uchile.cl/handle/2250/125275
Abstractdc.description.abstractThe electroluminescent (EL) signal of organic light emitting diodes (OLEDs) based on simple "hole transporting layer/electron transporting layer" (HTL/ETL) structures has been studied as a function of the anode/HTL interface, the anode being an indium tin oxide (ITO) film. It is shown that the electroluminescent (EL) signal increases when a metal ultra-thin layer is introduced between the anode and the HTL. Experimental results show that the work function value of the metal is only one of the factors which allow improving the EL signal via better hole injection efficiency. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en_US
Lenguagedc.language.isoenen_US
Publisherdc.publisherWILEY-V C H VERLAG GMBHen_US
Keywordsdc.subjectINDIUM-TIN OXIDEen_US
Títulodc.titleOn the improvement of the electroluminescent signal of organic light emitting diodes by the presence of an ultra-thin metal layer at the interface organic/ITOen_US
Document typedc.typeArtículo de revista


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