Hydrodynamic modeling of hot-carrier effects in a PN junction solar cell
Author
dc.contributor.author
Calderón Muñoz, Williams
Author
dc.contributor.author
Jara Bravo, Cristian
Admission date
dc.date.accessioned
2017-12-21T14:01:46Z
Available date
dc.date.available
2017-12-21T14:01:46Z
Publication date
dc.date.issued
2016
Cita de ítem
dc.identifier.citation
Acta Mech 227, 3247–3260 (2016)
es_ES
Identifier
dc.identifier.issn
0001-5970
Identifier
dc.identifier.other
10.1007/s00707-015-1538-5
Identifier
dc.identifier.uri
https://repositorio.uchile.cl/handle/2250/146249
Abstract
dc.description.abstract
This article presents a one-dimensional two-temperature hydrodynamic model to study the thermal and electrical behavior of a gallium arsenide (GaAs) PN junction solar cell. This model treats both electron and heat transfer on equal footing and includes Gauss's law, continuity and momentum equations for electrons and holes, and energy balance using temperature for both carriers and lattice. A zero-order system of equations is obtained using asymptotic series expansions based on the electron Reynolds number for steady-state conditions. An iterative scheme is implemented to solve the zero-order system. The results show the influence of carriers and lattice temperatures in the electrical performance of a GaAs PN junction solar cell. Higher values of power output are obtained with low lattice temperature and hot energy carriers. This modeling contributes to improve the thermal control in photovoltaic technologies