Photoluminescence from c-axis oriented ZnO films synthesized by sol-gel with diethanolamine as chelating agent
Author
dc.contributor.author
Marín, Óscar
Author
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Tirado, Mónica
Author
dc.contributor.author
Budini, Nicolás
Author
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Mosquera, Edgar
Author
dc.contributor.author
Figueroa, Carlos
Author
dc.contributor.author
Comedi, David
Admission date
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2018-01-15T17:48:07Z
Available date
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2018-01-15T17:48:07Z
Publication date
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2016
Cita de ítem
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Materials Science in Semiconductor Processing 56 (2016) 59–65
es_ES
Identifier
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10.1016/j.mssp.2016.07.007
Identifier
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https://repositorio.uchile.cl/handle/2250/146486
Abstract
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ZnO films were synthesized on SiO2/Si substrates through the sol-gel technique using diethanolamine as chelating agent and annealed in Ar + O-2 atmospheres with different O-2 flow-rates in the 10-100 sccm range. Samples were studied by scanning electron microscopy and X-ray diffraction, evidencing a nanostructured morphology with a preferential orientation along the (0 0 2) direction (c-axis orientation), which is uncommon when diethanolamine is used as the chelating agent. The room temperature photoluminescence spectra show strong UV emissions at around 375 and 384 nm from near band-edge transitions and phonon replica, and a broad defect-related band extending from the visible to near infrared (similar to 500-800 nm). The analysis of the defect-related emission band and its various components as a function of the O-2 flow-rate is discussed in terms of contributions from specific luminescent point defect centers established during annealing.