Piezospintronic effect in honeycomb antiferromagnets
Author
dc.contributor.author
Ulloa, Camilo
Author
dc.contributor.author
Troncoso, Roberto E.
Author
dc.contributor.author
Bender, Scott A.
Author
dc.contributor.author
Duine, R. A.
Author
dc.contributor.author
Núñez Vásquez, Álvaro
Admission date
dc.date.accessioned
2018-06-25T20:22:48Z
Available date
dc.date.available
2018-06-25T20:22:48Z
Publication date
dc.date.issued
2017
Cita de ítem
dc.identifier.citation
Physical Review B 96, 104419 (2017)
es_ES
Identifier
dc.identifier.other
10.1103/PhysRevB.96.104419
Identifier
dc.identifier.uri
https://repositorio.uchile.cl/handle/2250/149206
Abstract
dc.description.abstract
The emission of pure spin currents by mechanical deformations, the piezospintronic effect, in antiferromagnets is studied. We characterize the piezospintronic effect in an antiferromagnetic honeycomb monolayer in response to external strains. It is shown that the strain tensor components can be evaluated in terms of the spin Berry phase. In addition, we propose an experimental setup to detect the piezospin current generated in the piezospintronic material through the inverse spin Hall effect. Our results apply to a wide family of two-dimensional antiferromagnetic materials without inversion symmetry, such as the transition-metal chalcogenophosphate materials MPX3 (M = V, Mn; X = S, Se, Te) and NiPSe3.
es_ES
Patrocinador
dc.description.sponsorship
Fondecyt Regular
1150072
1161403
Financiamiento Basal para Centros Cientificos y Tecnologicos de Excelencia (Chile)
FB 0807
Fondecyt
3150372
Dutch Ministry of Education, Culture and Science (OCW)
Stichting voor Fundamenteel Onderzoek der Materie (FOM)