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Authordc.contributor.authorMoreno, E. 
Authordc.contributor.authorVarani, L. 
Cita de ítemdc.identifier.citationLithuanian Journal of Physics, Vol. 58, No. 2, pp. 170–176 (2018)es_ES
Abstractdc.description.abstractMobility models are an essential tool for an accurate description of the charge carrier dynamics in semiconductor materials and devices. By means of a simulator based on the Monte Carlo method which has been properly validated, a set of velocity and chord-mobility data was generated for electrons and holes in In0.53Ga0.47As bulk material as a function of electric field and for different concentrations of donors and acceptors. This set has been used to build an accurate velocity and chord-mobility analytical model, the mathematical simplicity of which represents a significant advantage because it provides necessary values by a rapid calculation process without forgoing accuracy. The model can be easily implemented in compact numerical simulations of electronic devices and associated circuits where a fast recovery of the velocity and mobility values corresponding to the local electric field and doping concentration is needed.es_ES
Publisherdc.publisherLithuanian Physical Societyes_ES
Type of licensedc.rightsAttribution-NonCommercial-NoDerivs 3.0 Chile*
Link to Licensedc.rights.uri*
Sourcedc.sourceLithuanian Journal of Physicses_ES
Keywordsdc.subjectmobility modeles_ES
Keywordsdc.subjectcharge carrier mobilityes_ES
Keywordsdc.subjectMonte Carlo methodses_ES
Keywordsdc.subjectcarrier velocityes_ES
Títulodc.titleAn accurate analytical model for nonequilibrium drift-velocity and chord-mobility of In0.53Ga0.47Ases_ES
Document typedc.typeArtículo de revistaes_ES
Indexationuchile.indexArtículo de publicación ISIes_ES

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Attribution-NonCommercial-NoDerivs 3.0 Chile
Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivs 3.0 Chile