Electronic and thermal properties of non-stoichiometric and doped cobaltum antimonide
Author
dc.contributor.author
Velasco-Soto, Diego
Author
dc.contributor.author
Menéndez Proupin, Eduardo
Author
dc.contributor.author
Realyvazquez-Guevara, Rebeca
Author
dc.contributor.author
Matutes-Aquino, José
Admission date
dc.date.accessioned
2019-05-31T15:18:53Z
Available date
dc.date.available
2019-05-31T15:18:53Z
Publication date
dc.date.issued
2018
Cita de ítem
dc.identifier.citation
Materials Research Express, Volumen 5, Issue 2, 2018
Identifier
dc.identifier.issn
20531591
Identifier
dc.identifier.other
10.1088/2053-1591/aaafb6
Identifier
dc.identifier.uri
https://repositorio.uchile.cl/handle/2250/169269
Abstract
dc.description.abstract
The electronic, vibrational and thermal properties of stoichiometric and non-stoichiometric cobalt antimonide CoSb x (x = 2.81, 2.875, and 3) are investigated by means of first principle calculations and thermal measurements. The molar heat capacity, electrical conductivity, and the electronic thermal conductivity are increased by the effect of Sb vacancies. Doping with Te and Ge also increases the electrical and thermal conductivity, suggesting that it can be used to enhance cobaltum antimonide as a thermoelectric material.