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Authordc.contributor.authorVelasco-Soto, Diego 
Authordc.contributor.authorMenéndez Proupin, Eduardo 
Authordc.contributor.authorRealyvazquez-Guevara, Rebeca 
Authordc.contributor.authorMatutes-Aquino, José 
Admission datedc.date.accessioned2019-05-31T15:18:53Z
Available datedc.date.available2019-05-31T15:18:53Z
Publication datedc.date.issued2018
Cita de ítemdc.identifier.citationMaterials Research Express, Volumen 5, Issue 2, 2018
Identifierdc.identifier.issn20531591
Identifierdc.identifier.other10.1088/2053-1591/aaafb6
Identifierdc.identifier.urihttps://repositorio.uchile.cl/handle/2250/169269
Abstractdc.description.abstractThe electronic, vibrational and thermal properties of stoichiometric and non-stoichiometric cobalt antimonide CoSb x (x = 2.81, 2.875, and 3) are investigated by means of first principle calculations and thermal measurements. The molar heat capacity, electrical conductivity, and the electronic thermal conductivity are increased by the effect of Sb vacancies. Doping with Te and Ge also increases the electrical and thermal conductivity, suggesting that it can be used to enhance cobaltum antimonide as a thermoelectric material.
Lenguagedc.language.isoen
Publisherdc.publisherInstitute of Physics Publishing
Type of licensedc.rightsAttribution-NonCommercial-NoDerivs 3.0 Chile
Link to Licensedc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/cl/
Sourcedc.sourceMaterials Research Express
Keywordsdc.subjectelectric properties
Keywordsdc.subjectmodeling
Keywordsdc.subjectsemiconductors
Keywordsdc.subjectthermal properties
Keywordsdc.subjectthermoelectric materials
Títulodc.titleElectronic and thermal properties of non-stoichiometric and doped cobaltum antimonide
Document typedc.typeArtículo de revista
Catalogueruchile.catalogadorjmm
Indexationuchile.indexArtículo de publicación SCOPUS
uchile.cosechauchile.cosechaSI


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Attribution-NonCommercial-NoDerivs 3.0 Chile
Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivs 3.0 Chile