Structural, optical and electrical properties of DC sputtered indium saving indium-tin oxide (ITO) thin films
Author
dc.contributor.author
Voisin, Leandro
Author
dc.contributor.author
Ohtsuka, Makoto
Author
dc.contributor.author
Petrovska, Svitlana
Author
dc.contributor.author
Sergiienko, Ruslan
Author
dc.contributor.author
Nakamura, Takashi
Admission date
dc.date.accessioned
2019-05-31T15:19:00Z
Available date
dc.date.available
2019-05-31T15:19:00Z
Publication date
dc.date.issued
2018
Cita de ítem
dc.identifier.citation
Optik, Volumen 156, 2018, Pages 728–737
Identifier
dc.identifier.issn
00304026
Identifier
dc.identifier.other
10.1016/j.ijleo.2017.12.021
Identifier
dc.identifier.uri
https://repositorio.uchile.cl/handle/2250/169292
Abstract
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Amorphous indium tin oxide (ITO) thin films with reduced to 50 mass% indium oxide
content were prepared by direct current (DC) sputtering of ITO target in mixed argonoxygen atmosphere onto glass substrates preheated at 523K. The films were subsequently
heat-treated in air at different temperatures in the range of 523–923K for 60 min. The
use of oxygen during deposition resulted in highly transparent (>80%) in visible and
infrared ranges of spectra films. It has been found from the electrical measurements
that as-deposited films under optimum sputtering conditions at working gas flow rate of
Q(Ar)/Q(O2) = 50 sccm/0.5 sccm showed minimum volume resistivity of about 694 cm.
As-deposited thin films obtained under the optimum condition showed amorphous structure. Improving of crystallisation has been observed with increasing heat treatment
temperature. It has been found that DC sputtered films with decreasing amount of indium
oxide have smooth surface in contrast to typical ITO (90 mass% indium oxide).