Multilayer indium saving ITO thin films produced by sputtering method
| Author | dc.contributor.author | Voisin, L. | |
| Author | dc.contributor.author | Ohtsuka, M. | |
| Author | dc.contributor.author | Petrovska, S. | |
| Author | dc.contributor.author | Sergiienko, R. | |
| Author | dc.contributor.author | Nakamura, T. | |
| Admission date | dc.date.accessioned | 2020-04-22T14:54:59Z | |
| Available date | dc.date.available | 2020-04-22T14:54:59Z | |
| Publication date | dc.date.issued | 2020 | |
| Cita de ítem | dc.identifier.citation | Journal of Alloys and Compounds 827 (2020) 154378 | es_ES |
| Identifier | dc.identifier.other | 10.1016/j.jallcom.2020.154378 | |
| Identifier | dc.identifier.uri | https://repositorio.uchile.cl/handle/2250/174005 | |
| Abstract | dc.description.abstract | Low volume resistivity and high transmittance. Double-layered structures consisting of very thin layer of conventional indium tin oxide (In2O3-10 mass % SnO2) and indium saving indium-tin oxide (In2O3-50 mass % SnO2) layer were grown by DC sputtering on glass substrates preheated at 523 K. It was found that this method can produce polycrystalline ITO thin films having volume resistivity as low as 281 mu Omega cm, mobility 28 cm(2)/V.s and carrier concentration 5.32 10(20) cm(-3). Average optical transmittances exhibited above 85% in visible range of spectrum. Arithmetical mean height (S-a) and root mean square height (S-q) of films deposited at optimum conditions were 1.09 and 1.40 nm, respectively. | es_ES |
| Patrocinador | dc.description.sponsorship | New Energy and Industrial Technology Development Organization (NEDO) | es_ES |
| Lenguage | dc.language.iso | en | es_ES |
| Publisher | dc.publisher | Elsevier | es_ES |
| Type of license | dc.rights | Attribution-NonCommercial-NoDerivs 3.0 Chile | * |
| Link to License | dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/cl/ | * |
| Source | dc.source | Journal of Alloys and Compounds | es_ES |
| Keywords | dc.subject | Indium tin oxide | es_ES |
| Keywords | dc.subject | Direct current sputtering | es_ES |
| Keywords | dc.subject | Electrical properties | es_ES |
| Keywords | dc.subject | Optical properties | es_ES |
| Keywords | dc.subject | Surface roughness | es_ES |
| Título | dc.title | Multilayer indium saving ITO thin films produced by sputtering method | es_ES |
| Document type | dc.type | Artículo de revista | es_ES |
| dcterms.accessRights | dcterms.accessRights | Acceso Abierto | |
| Cataloguer | uchile.catalogador | crb | es_ES |
| Indexation | uchile.index | Artículo de publicación ISI | |
| Indexation | uchile.index | Artículo de publicación SCOPUS |
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Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivs 3.0 Chile