Show simple item record

Authordc.contributor.authorArenas, Claudio 
Authordc.contributor.authorHerrera Huerta, Guillermo 
Authordc.contributor.authorMuñoz, Enrique 
Authordc.contributor.authorMuñoz Alvarado, Raúl 
Admission datedc.date.accessioned2021-09-24T15:03:02Z
Available datedc.date.available2021-09-24T15:03:02Z
Publication datedc.date.issued2021
Cita de ítemdc.identifier.citationMater. Res. Express 8 (2021) 015026es_ES
Identifierdc.identifier.other10.1088/2053-1591/abd422
Identifierdc.identifier.urihttp://repositorio.uchile.cl/handle/2250/182090
Abstractdc.description.abstractWe report the resistivity measured at temperatures between 5 K and 300 K of a Cu film 63 nm thick with grains that have a diameter d = 10.5 nm on the average. The resistivity of this film is described by the first quantum theory of resistivity of nano-scale metallic connectors [R C Munoz et al, App. Phys. Rev. 4 (2017) 011102]. We also report an improved version of this theory that includes a new analytical description of the effect of grain boundary disorder on electron transport. We employ the surface roughness and grain size distribution measured on this Cu film as input data to compute, using our heory, the room temperature resistivity of Cu wires of rectangular cross section, and compare with the resistivity of these wires reported in the literature [M H Van der Veen et al, 2018 IEEE International Interconnect Technology Conference (IITC) (2018)], that are used for designing Integrated Circuits (IC) for the 14 nm, 10 nm, 7 nm, 5 nm, 3 nm and 2 nm nodes, respectively. The quantum theory predicts an increase in resistivity with diminishing wire dimensions that accurately agrees with the room temperature resistivity measured on these Cu wires. The resistivity induced by electron-rough surface scattering accounts for about half of the increase over the bulk observed in the 3 nm and 2 nm tech node; scattering by non-uniform grain boundaries contributes the remaining increase in resistivity-the latter is responsible for the weak Anderson localization. According to the description of electron motion furnished by this improved quantum theory, the break down of Moore's law with shrinking wire dimensions is to be expected, since it originates from size effects triggered by electron scattering with rough surfaces and scattering by non-equally spaced grain boundaries, which become dominant as the dimensions of the metallic wire shrinks.es_ES
Patrocinadordc.description.sponsorshipComision Nacional de Investigacion Cientifica y Tecnologica (CONICYT) CONICYT FONDECYT 1190361 ANID PIA/Anillo ACT192023es_ES
Lenguagedc.language.isoenes_ES
Publisherdc.publisherIOPes_ES
Type of licensedc.rightsAttribution-NonCommercial-NoDerivs 3.0 Chile*
Link to Licensedc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/cl/*
Sourcedc.sourceMaterials Research Expresses_ES
Keywordsdc.subjectAnderson localizationes_ES
Keywordsdc.subjectSize effectses_ES
Keywordsdc.subjectBreakdown of Moore's lawes_ES
Keywordsdc.subjectQuantum theory of resistivity of nanometric metallic connectorses_ES
Títulodc.titleThe breakdown of Moore's law induced by weak Anderson localization and by size effects in nano-scale metallic connectorses_ES
Document typedc.typeArtículo de revistaes_ES
Catalogueruchile.catalogadorapces_ES
Indexationuchile.indexArtículo de publicación ISIes_ES


Files in this item

Icon

This item appears in the following Collection(s)

Show simple item record

Attribution-NonCommercial-NoDerivs 3.0 Chile
Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivs 3.0 Chile