Evidence of weak Anderson localization revealed by the resistivity, transverse magnetoresistance and Hall effect measured on thin Cu films deposited on mica
Author
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Díaz, Eva
Author
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Herrera, Guillermo
Author
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Oyarzún, Simón
Author
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Muñoz Alvarado, Raúl Carlos
Admission date
dc.date.accessioned
2021-12-15T11:12:27Z
Available date
dc.date.available
2021-12-15T11:12:27Z
Publication date
dc.date.issued
2021
Cita de ítem
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Scientifc Reports (2021) 11:17820
es_ES
Identifier
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10.1038/s41598-021-97210-w
Identifier
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https://repositorio.uchile.cl/handle/2250/183226
Abstract
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We report the resistivity of 5 Cu films approximately 65 nm thick, measured between 5 and 290 K, and the transverse magnetoresistance and Hall effect measured at temperatures 5 K < T < 50 K. The mean grain diameters are D = (8.9, 9.8, 20.2, 31.5, 34.7) nm, respectively. The magnetoresistance signal is positive in samples where D > L/2 (where L = 39 nm is the electron mean free path in the bulk at room temperature), and negative in samples where D < L/2. The sample where D = 20.2 nm exhibits a negative magnetoresistance at B < 2 Tesla and a positive magnetoresistance at B > 3 Tesla. A negative magnetoresistance in Cu films has been considered evidence of charge transport involving weak Anderson localization. These experiments reveal that electron scattering by disordered grain boundaries found along L leads to weak Anderson localization, confirming the localization phenomenon predicted by the quantum theory of resistivity of nanometric metallic connectors. Anderson localization becomes a severe obstacle for the successful development of the circuit miniaturization effort pursued by the electronic industry, for it leads to a steep rise in the resistivity of nanometric metallic connectors with decreasing wire dimensions (D < L/2) employed in the design of Integrated Circuits.
es_ES
Lenguage
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en
es_ES
Publisher
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Nature
es_ES
Type of license
dc.rights
Attribution-NonCommercial-NoDerivs 3.0 United States
Evidence of weak Anderson localization revealed by the resistivity, transverse magnetoresistance and Hall effect measured on thin Cu films deposited on mica