Surface and electrical characterization of bilayers based on BiFeO3 and VO2
Author
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Martínez, Jhonatan
Author
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Mosquera Vargas, Edgar Eduardo
Author
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Fuenzalida Escobar, Víctor Manuel
Author
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Flores Carrasco, Marcos Iván
Author
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Bolaños, Gilberto
Author
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Diosa, Jesús
Admission date
dc.date.accessioned
2023-06-14T21:15:33Z
Available date
dc.date.available
2023-06-14T21:15:33Z
Publication date
dc.date.issued
2022
Cita de ítem
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Nanomaterials 2022, 12, 2578
es_ES
Identifier
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10.3390/nano12152578
Identifier
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https://repositorio.uchile.cl/handle/2250/194336
Abstract
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Thin films of BiFeO3, VO2, and BiFeO3/VO2 were grown on SrTiO3(100) and Al2O3(0001)
monocrystalline substrates using radio frequency and direct current sputtering techniques. To observe
the effect of the coupling between these materials, the surface of the films was characterized
by profilometry, atomic force microscopy, and X-ray photoelectron spectroscopy. The heterostructures,
monolayers, and bilayers based on BiFeO3 and VO2 grew with good adhesion and without
delamination or signs of incompatibility between the layers. A good granular arrangement and RMS
roughness between 1 and 5 nm for the individual layers (VO2 and BiFeO3) and between 6 and 18 nm
for the bilayers (BiFeO3/VO2) were observed. Their grain size is between 20 nm and 26 nm for the
individual layers and between 63 nm and 67 nm for the bilayers. X-ray photoelectron spectroscopy
measurements show a higher proportion of V4+, Bi3+, and Fe3+ in the films obtained. The homogeneous
ordering, low roughness, and oxidation states on the obtained surface show a good coupling
in these films. The I-V curves show ohmic behavior at room temperature and change with increasing
temperature. The effect of coupling these materials in a thin film shows the appearance of hysteresis
cycles, I-V and R-T, which is typical of materials with high potential in applications, such as resistive
memories and solar cells.
es_ES
Patrocinador
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Universidad del Valle
Universidad de Chile
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Lenguage
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en
es_ES
Publisher
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MDPI
es_ES
Type of license
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Attribution-NonCommercial-NoDerivs 3.0 United States