Floquet bound states around defects and adatoms in graphene
Author
dc.contributor.author
Lovey, D. A.
Author
dc.contributor.author
Usaj, Gonzalo
Author
dc.contributor.author
Torres, L. E. F. Foa
Author
dc.contributor.author
Balseiro, C. A.
Admission date
dc.date.accessioned
2016-12-05T19:37:48Z
Available date
dc.date.available
2016-12-05T19:37:48Z
Publication date
dc.date.issued
2016
Cita de ítem
dc.identifier.citation
Physical Review B 93, 245434 (2016)
es_ES
Identifier
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10.1103/PhysRevB.93.245434
Identifier
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https://repositorio.uchile.cl/handle/2250/141660
Abstract
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Recent studies have focused on laser-induced gaps in graphene which have been shown to have a topological origin, thereby hosting robust states at the sample edges. While the focus has remainedmainly on these topological chiral edge states, the Floquet bound states around defects lack a detailed study. In this paper we present such a study covering large defects of different shape and also vacancy-like defects and adatoms at the dynamical gap at h Omega/2 (h Omega being the photon energy). Our results, based on analytical calculations as well as numerics for full tight-binding models, show that the bound states are chiral and appear in a number which grows with the defect size. Furthermore, while the bound states exist regardless of the type of the defect's edge termination (zigzag, armchair, mixed), the spectrum is strongly dependent on it. In the case of top adatoms, the bound state quasienergies depend on the adatoms energy. The appearance of such bound states might open the door to the presence of topological effects on the bulk transport properties of dirty graphene.
es_ES
Patrocinador
dc.description.sponsorship
Bicentenario from ANPCyT
2010-1060
CONICET
PIPs 11220080101821
11220110100832
SeCyT-UNC
06/C415
Abdus Salam ICTP associateship program
PICTs 2008-2236
2011-1552