Growth andelectronfield-emissionofsingle-crystallineZnOnanowires
| Author | dc.contributor.author | Mosquera Vargas, Edgar | |
| Author | dc.contributor.author | Bernal, Jimmy | es_CL |
| Author | dc.contributor.author | Zárate Aliaga, Ramón | es_CL |
| Author | dc.contributor.author | Mendoza, Frank | es_CL |
| Author | dc.contributor.author | Katiyar, Ram S. | es_CL |
| Author | dc.contributor.author | Morell, Gerardo | es_CL |
| Admission date | dc.date.accessioned | 2014-01-29T19:57:46Z | |
| Available date | dc.date.available | 2014-01-29T19:57:46Z | |
| Publication date | dc.date.issued | 2012 | |
| Cita de ítem | dc.identifier.citation | Materials Letters 93 (2013) 326–329 | en_US |
| Identifier | dc.identifier.uri | https://repositorio.uchile.cl/handle/2250/126328 | |
| Abstract | dc.description.abstract | ZnO nanowireswithhighdensityaregrownoverzincfoilbythermalevaporationprocessatrelatively low temperature.Electronmicroscopystudiesconfirmedthattheas-grownnanowiresareofsingle crystalhexagonalwurtzitestructure,growingpreferentiallyinthe c-axisdirection.TheRaman spectrumoftheZnOnanowiresshowsanoptical-phononE2 modeat440cm 1 confirminggood crystallinityforthegrownnanowires.ThefieldemissionmeasurementindicatedthatZnOnanowires have aturn-onfieldof9.1V/mm atcurrentdensityof0.001 mA/cm2. | en_US |
| Lenguage | dc.language.iso | en | en_US |
| Publisher | dc.publisher | Elsevier B.V. | en_US |
| Type of license | dc.rights | Attribution-NonCommercial-NoDerivs 3.0 Chile | * |
| Link to License | dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/cl/ | * |
| Keywords | dc.subject | Nanowires | en_US |
| Título | dc.title | Growth andelectronfield-emissionofsingle-crystallineZnOnanowires | en_US |
| Document type | dc.type | Artículo de revista |
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