Application of photochemical method in the synthesis of Ga2O3 X thin films co-doped with terbium and europium
Author
dc.contributor.author
Cabello, G.
Author
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Araneda, A.
es_CL
Author
dc.contributor.author
Lillo, L.
es_CL
Author
dc.contributor.author
Caro, C.
es_CL
Author
dc.contributor.author
Venegas, C.
es_CL
Author
dc.contributor.author
Tejos, M.
es_CL
Author
dc.contributor.author
Chornik Aberbuch, Boris
Admission date
dc.date.accessioned
2014-12-11T20:05:39Z
Available date
dc.date.available
2014-12-11T20:05:39Z
Publication date
dc.date.issued
2014
Cita de ítem
dc.identifier.citation
Solid State Sciences 27 (2014) 24e29
en_US
Identifier
dc.identifier.other
DOI: 10.1016/j.solidstatesciences.2013.11.002
Identifier
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https://repositorio.uchile.cl/handle/2250/126531
General note
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Artículo de publicación ISI
en_US
Abstract
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Ga2O3 X thin films co-doped with terbium and europium have been prepared by photochemical metalorganic
deposition. In this process, solutions containing Ga(III), Tb(III) and Eu(III) 2,2,6,6-tetramethyl-3,5-
heptanedionate complexes were spin coated on silicon and quartz substrates. Upon irradiation, the
photosensitive of the complexes precursors undergoes decomposition, leaving a gallium oxide amorphous
thin film containing terbium and europium. The photo-reactivity of these films was monitored by
UV vis and FT-IR spectroscopy. The obtained films were characterized by X-ray photoelectron spectroscopy
and X-ray diffraction. Under UV light excitation (254 nm) the doped films (Ga2O3 XeTb) show
the characteristic emissions associated to 5D4 /7FJ (J ¼ 6, 5, 4, 3) transitions of terbium ion. However,
these emissions decrease with the co-doped films (Ga2O3 XeTbeEu). Analysis suggests an energy
transfer process among terbium and europium ions.
en_US
Patrocinador
dc.description.sponsorship
The authors are grateful to the financial support of National
Fund for Scientific and Technological Development, Chile. (FONDECYT
N 1100045).