Application of photochemical method in the synthesis of Ga2O3 X thin films co-doped with terbium and europium

Abstract

Ga2O3 X thin films co-doped with terbium and europium have been prepared by photochemical metalorganic deposition. In this process, solutions containing Ga(III), Tb(III) and Eu(III) 2,2,6,6-tetramethyl-3,5- heptanedionate complexes were spin coated on silicon and quartz substrates. Upon irradiation, the photosensitive of the complexes precursors undergoes decomposition, leaving a gallium oxide amorphous thin film containing terbium and europium. The photo-reactivity of these films was monitored by UV vis and FT-IR spectroscopy. The obtained films were characterized by X-ray photoelectron spectroscopy and X-ray diffraction. Under UV light excitation (254 nm) the doped films (Ga2O3 XeTb) show the characteristic emissions associated to 5D4 /7FJ (J ¼ 6, 5, 4, 3) transitions of terbium ion. However, these emissions decrease with the co-doped films (Ga2O3 XeTbeEu). Analysis suggests an energy transfer process among terbium and europium ions.