Voltage-controlled gating in a large conductance Ca2+-sensitive K+ channel (hslo)
Author
dc.contributor.author
Stefani, E.
Author
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Ottolia, M.
Author
dc.contributor.author
Noceti, F.
Author
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Olcese, R.
Author
dc.contributor.author
Wallner, M.
Author
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Latorre, R.
Author
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Toro, L.
Admission date
dc.date.accessioned
2019-01-29T15:55:02Z
Available date
dc.date.available
2019-01-29T15:55:02Z
Publication date
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1997
Cita de ítem
dc.identifier.citation
Proceedings of the National Academy of Sciences of the United States of America, Volumen 94, Issue 10, 2018, Pages 5427-5431
Identifier
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00278424
Identifier
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10.1073/pnas.94.10.5427
Identifier
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https://repositorio.uchile.cl/handle/2250/162764
Abstract
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Large conductance calcium- and voltage-sensitive K+ (MaxiK) channels share properties of voltage-and ligand-gated ion channels. In voltage-gated channels, membrane depolarization promotes the displacement of charged residues contained in the voltage sensor (S4 region) inducing gating currents and pore opening. In MaxiK channels, both voltage and micromolar internal Ca2+ favor pore opening. We demonstrate the presence of voltage sensor rearrangements with voltage (gating currents) whose movement and associated pore opening is triggered by voltage and facilitated by micromolar internal Ca2+ concentration. In contrast to other voltage-gated channels, in MaxiK channels there is charge movement at potentials where the pore is open and the total charge per channel is 4-5 elementary charges.