Unipolar resistive switching behavior in Al2O3/HfO2 multilayer dielectric stacks: fabrication, characterization and simulation
Author
dc.contributor.author
Maestro Izquierdo, M.
Author
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González, M. B.
Author
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Jiménez Molinos, F.
Author
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Moreno, E.
Author
dc.contributor.author
Roldán, J. B.
Author
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Campabadal, F.
Admission date
dc.date.accessioned
2020-07-06T22:14:45Z
Available date
dc.date.available
2020-07-06T22:14:45Z
Publication date
dc.date.issued
2020
Cita de ítem
dc.identifier.citation
Nanotechnology 31 (2020) 135202 (10pp)
es_ES
Identifier
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10.1088/1361-6528/ab5f9a
Identifier
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https://repositorio.uchile.cl/handle/2250/175814
Abstract
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In this work, the impact of different HfO2/Al2O3-based multilayer dielectric stack (DS) configurations on the electrical characteristics and on the resistive switching (RS) performance of Ni/Insulator/Silicon devices has been systematically investigated. Significant differences are observed in the electrical characteristics of the fabricated bilayer, trilayer and pentalayer stacks compared to a single HfO2 layer of the same physical thickness. The RS analysis has shown similar low resistance state currents and set voltages for all the DS combinations whereas currents at the high resistance state and reset voltages depend on the DS. The shift of the reset voltage to lower values for HfO2 and Al2O3/HfO2/Al2O3 cases is explained by the results from thermal simulations that reveal that these differences could be associated to the different temperature distributions at the narrowest part of the conductive filament immediately before the thermally triggered reset process occurs.
es_ES
Patrocinador
dc.description.sponsorship
Spanish Ministry of Science, Innovation and Universities
TEC2017-84321-C4-1-R
TEC2017-84321-C4-3-R
ERDF program
TEC2017-84321-C4-1-R
TEC2017-84321-C4-3-R
FENDECYT project
3180130