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Authordc.contributor.authorRuiz León, Domingo 
Authordc.contributor.authorManríquez Castro, Víctor es_CL
Authordc.contributor.authorKasaneva, J. es_CL
Authordc.contributor.authorÁvila, R. E. es_CL
Admission datedc.date.accessioned2014-01-08T14:43:54Z
Available datedc.date.available2014-01-08T14:43:54Z
Publication datedc.date.issued2002-04
Cita de ítemdc.identifier.citationMATERIALS RESEARCH BULLETIN Volume: 37 Issue: 5 Pages: 981-989 Article Number: PII S0025-5408(02)00719-5 Published: APR 2002en_US
Identifierdc.identifier.otherDOI: 10.1016/S0025-5408(02)00719-5
Identifierdc.identifier.urihttps://repositorio.uchile.cl/handle/2250/119660
General notedc.descriptionArtículo de publicación ISIen_US
Abstractdc.description.abstractThe Al0.21Mn0.78PS3, Al0.15Cd0.83PS3, In0.20Cd0.70PS3 and Ga0.28Cd0.58PS3 compounds have been synthesized by the cation-exchange process used for other cationic species of the same family. These compounds were characterized by X-ray diffraction, Fourier transform infrared spectroscopy, ICP plasma analyses, photoconductivity and electrochemical impedance spectroscopy. The compounds synthesized show electrical conductivities (U) of the order of 10(-9) to 10(-10) S cm(-1) at 298 K and photoconductive effect. The physical properties of the new Al3+ materials reveal the same behavior as our previous report on In3+ and Ga3+ compounds.en_US
Lenguagedc.language.isoenen_US
Publisherdc.publisherPERGAMON-ELSEVIER SCIENCEen_US
Type of licensedc.rightsAttribution-NonCommercial-NoDerivs 3.0 Chile*
Link to Licensedc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/cl/*
Keywordsdc.subjectchalcogenidesen_US
Títulodc.titleInsertion of trivalent cations in the layered MPS3 (Mn, Cd) materialsen_US
Document typedc.typeArtículo de revista


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Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivs 3.0 Chile