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Authordc.contributor.authorMuñoz Saez, Francisco 
Authordc.contributor.authorVergniory, M. 
Authordc.contributor.authorRauch, T. 
Authordc.contributor.authorHenk, J. 
Authordc.contributor.authorChulkov, E. 
Authordc.contributor.authorMertig, I. 
Authordc.contributor.authorBotti, S. 
Authordc.contributor.authorMarques, M. 
Authordc.contributor.authorRomero, A. 
Admission datedc.date.accessioned2016-06-17T21:04:00Z
Available datedc.date.available2016-06-17T21:04:00Z
Publication datedc.date.issued2016
Cita de ítemdc.identifier.citationScientific Reports Volumen: 6 Número de artículo: 21790 (2016)en_US
Identifierdc.identifier.otherDOI: 10.1038/srep21790
Identifierdc.identifier.urihttps://repositorio.uchile.cl/handle/2250/139018
General notedc.descriptionArtículo de publicación ISIen_US
Abstractdc.description.abstractTopological crystalline insulators are a type of topological insulators whose topological surface states are protected by a crystal symmetry, thus the surface gap can be tuned by applying strain or an electric field. In this paper we predict by means of ab initio calculations a new phase of Bi which is a topological crystalline insulator characterized by a mirror Chern number n(M) = -2, but not a Z(2) strong topological insulator. This system presents an exceptional property: at the (001) surface its Dirac cones are pinned at the surface high-symmetry points. As a consequence they are also protected by time-reversal symmetry and can survive against weak disorder even if in-plane mirror symmetry is broken at the surface. Taking advantage of this dual protection, we present a strategy to tune the band-gap based on a topological phase transition unique to this system. Since the spin-texture of these topological surface states reduces the back-scattering in carrier transport, this effective band-engineering is expected to be suitable for electronic and optoelectronic devices with reduced dissipation.en_US
Patrocinadordc.description.sponsorshipFondecyt 1150806en_US
Lenguagedc.language.isoenen_US
Publisherdc.publisherNATURE PUBLISHING GROUPen_US
Type of licensedc.rightsAtribución-NoComercial-SinDerivadas 3.0 Chile*
Link to Licensedc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/cl/*
Keywordsdc.subjectELECTRONIC-PROPERTIESen_US
Keywordsdc.subjectSTATESen_US
Keywordsdc.subjectSURFACEen_US
Keywordsdc.subjectBISMUTHen_US
Keywordsdc.subjectMETALSen_US
Keywordsdc.subjectSNTEen_US
Títulodc.titleTopological Crystalline Insulator in a New Bi Semiconducting Phaseen_US
Document typedc.typeArtículo de revista


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Atribución-NoComercial-SinDerivadas 3.0 Chile
Except where otherwise noted, this item's license is described as Atribución-NoComercial-SinDerivadas 3.0 Chile