Topological Crystalline Insulator in a New Bi Semiconducting Phase
Author
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Muñoz Saez, Francisco
Author
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Vergniory, M.
Author
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Rauch, T.
Author
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Henk, J.
Author
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Chulkov, E.
Author
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Mertig, I.
Author
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Botti, S.
Author
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Marques, M.
Author
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Romero, A.
Admission date
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2016-06-17T21:04:00Z
Available date
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2016-06-17T21:04:00Z
Publication date
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2016
Cita de ítem
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Scientific Reports Volumen: 6 Número de artículo: 21790 (2016)
en_US
Identifier
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DOI: 10.1038/srep21790
Identifier
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https://repositorio.uchile.cl/handle/2250/139018
General note
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Artículo de publicación ISI
en_US
Abstract
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Topological crystalline insulators are a type of topological insulators whose topological surface states are protected by a crystal symmetry, thus the surface gap can be tuned by applying strain or an electric field. In this paper we predict by means of ab initio calculations a new phase of Bi which is a topological crystalline insulator characterized by a mirror Chern number n(M) = -2, but not a Z(2) strong topological insulator. This system presents an exceptional property: at the (001) surface its Dirac cones are pinned at the surface high-symmetry points. As a consequence they are also protected by time-reversal symmetry and can survive against weak disorder even if in-plane mirror symmetry is broken at the surface. Taking advantage of this dual protection, we present a strategy to tune the band-gap based on a topological phase transition unique to this system. Since the spin-texture of these topological surface states reduces the back-scattering in carrier transport, this effective band-engineering is expected to be suitable for electronic and optoelectronic devices with reduced dissipation.