Structural characterization and dielectric properties of the solid solutions AgPb(Sb,Bi)S 3
Author
dc.contributor.author
Galdámez, Antonio
Author
dc.contributor.author
López-Vergara, Fernanda
Author
dc.contributor.author
Barahona, Patricia
Author
dc.contributor.author
Manríquez, Victor
Author
dc.contributor.author
Ávila, Ricardo E.
Admission date
dc.date.accessioned
2018-12-20T14:13:13Z
Available date
dc.date.available
2018-12-20T14:13:13Z
Publication date
dc.date.issued
2012
Cita de ítem
dc.identifier.citation
Journal of Solid State Electrochemistry, Volumen 16, Issue 2, 2018, Pages 697-702
Identifier
dc.identifier.issn
14328488
Identifier
dc.identifier.other
10.1007/s10008-011-1415-7
Identifier
dc.identifier.uri
https://repositorio.uchile.cl/handle/2250/154916
Abstract
dc.description.abstract
The new solid solutions AgPbSb 1 - x Bi x S 3 were prepared by solid state reactions. The phases were characterized by powder X-ray diffractions (XRD), scanning electron microscopy, and thermal analysis. The XRD patterns of different members (x = 0.5, 0.7, 0.8, and 1.0) are consistent with pure phases crystallizing in the cubic PbS-type structure. The electrical characterization was carried out using ac impedance spectroscopy and dc methods. The temperature dependence of the dc conductivity shows typical semiconductor Arrhenius behavior. The impedance measurements were performed in the frequency range of 0.1 Hz to 10 MHz and at the temperature range of 15°C to 350°C. The ac conductivity conforms to Jonscher's universal power law. The frequency dependence of the dielectric permittivity follows the normal dielectric material behavior, and the relaxation is thermally activated. The frequency and temperature dependences of the electrical data are found to follow Summerfield scaling formali