Transverse magnetoresistance induced by electron-surface scattering on thin gold films: Experiment and theory
Author
dc.contributor.author
Oyarzún, Simón
Author
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Henríquez, Ricardo
Author
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Suárez, Marco Antonio
Author
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Moraga, Luis
Author
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Kremer, Germán
Author
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Munoz, Raúl C.
Admission date
dc.date.accessioned
2018-12-20T14:14:01Z
Available date
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2018-12-20T14:14:01Z
Publication date
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2014
Cita de ítem
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Applied Surface Science, Volumen 289,
Identifier
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01694332
Identifier
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10.1016/j.apsusc.2013.10.128
Identifier
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https://repositorio.uchile.cl/handle/2250/155069
Abstract
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We report new experimental data regarding the transverse magnetoresistance measured in a family of thin gold films of different thickness with the electric field E oriented perpendicular to the magnetic field B (both fields contained within the plane of the film), as well as a theoretical description of size effects based upon a solution of Boltzmann Transport Equation. The measurements were performed at low temperatures T (4 K ≤ T ≤ 50 K) under magnetic field strengths B (1.5 T ≤ B ≤ 9 T). The magnetoresistance signal can be univocally identified as arising from electron-surface scattering, for the Hall mobility at 4 K depends linearly on film thickness. The magnetoresistance signal exhibits a marked thickness dependence, and its curvature as a function of magnetic field B varies with film thickness. The theoretical description of the magnetic field dependence of the magnetoresistance requires a Hall field that varies with the thickness of the film; this Hall field is tuned to reprodu