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Authordc.contributor.authorLombardo S., Nelson C., Chae K., Reyes-Lillo S., Tian M., Tasneem N., Wang Z., Hoffmann M., Triyoso D., Consiglio S., Tapily K., Clark R., Leusink G., Cho K., Kummel A., Kacher J., Khan A.
Admission datedc.date.accessioned2022-12-27T13:57:39Z
Available datedc.date.available2022-12-27T13:57:39Z
Publication datedc.date.issued2020
Identifierdc.identifier.issn07431562
Identifierdc.identifier.other10.1109/VLSITechnology18217.2020.9265091
Identifierdc.identifier.urihttps://repositorio.uchile.cl/handle/2250/190487
Lenguagedc.language.isoen
Publisherdc.publisherInstitute of Electrical and Electronics Engineers Inc.
Type of licensedc.rightsAttribution-NonCommercial-NoDerivs 3.0 Chile
Link to Licensedc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/cl/
Sourcedc.sourceDigest of Technical Papers - Symposium on VLSI Technology
Títulodc.titleAtomic-scale imaging of polarization switching in an (anti-)ferroelectric memory material: Zirconia (ZrO2)
Document typedc.typeArtículo de revista
Catalogueruchile.catalogadorSCOPUS
Indexationuchile.indexArtículo de publicación ISI
Indexationuchile.indexArtículo de publicación SCOPUS
Indexationuchile.indexArtículo de publicación SCIELO
uchile.cosechauchile.cosechaSI


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Attribution-NonCommercial-NoDerivs 3.0 Chile
Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivs 3.0 Chile