Voltage-controlled gating in a large conductance Ca2+-sensitive K+ channel (hslo)
Artículo
Open/ Download
Publication date
1997Metadata
Show full item record
Cómo citar
Stefani, E.
Cómo citar
Voltage-controlled gating in a large conductance Ca2+-sensitive K+ channel (hslo)
Author
Abstract
Large conductance calcium- and voltage-sensitive K+ (MaxiK) channels share properties of voltage-and ligand-gated ion channels. In voltage-gated channels, membrane depolarization promotes the displacement of charged residues contained in the voltage sensor (S4 region) inducing gating currents and pore opening. In MaxiK channels, both voltage and micromolar internal Ca2+ favor pore opening. We demonstrate the presence of voltage sensor rearrangements with voltage (gating currents) whose movement and associated pore opening is triggered by voltage and facilitated by micromolar internal Ca2+ concentration. In contrast to other voltage-gated channels, in MaxiK channels there is charge movement at potentials where the pore is open and the total charge per channel is 4-5 elementary charges.
Indexation
Artículo de publicación SCOPUS
Identifier
URI: https://repositorio.uchile.cl/handle/2250/162764
DOI: 10.1073/pnas.94.10.5427
ISSN: 00278424
Quote Item
Proceedings of the National Academy of Sciences of the United States of America, Volumen 94, Issue 10, 2018, Pages 5427-5431
Collections