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Electron grain boundary scattering and the resistivity of nanometric metallic structures

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2010-09-23
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Henríquez, Ricardo
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Electron grain boundary scattering and the resistivity of nanometric metallic structures
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Author
  • Henríquez, Ricardo;
  • Cancino, Simón;
  • Espinosa, Andrés;
  • Flores Carrasco, Marcos;
  • Hoffmann, Michael;
  • Kremer Erdmann, Germán;
  • Lisoni Reyes, Judith;
  • Moraga, Luis;
  • Morales, Roberto;
  • Oyarzún, Simón;
  • Suárez, Marco;
  • Zúñiga Páez, Alejandro;
  • Muñoz Alvarado, Raúl;
Abstract
The resistivity of metallic structures depends on both electron-grain boundary scattering and electron-surface scattering. By tuning the grain size, we have been able to separate the contribution to the resistivity originating in electron-grain boundary scattering, from that arising in electron-surface scattering, on gold films approximately 54 nm thick deposited onto mica substrates under high vacuum. Surprisingly, the resistivity measured between 4 and 300 K can be described by Drude’s model; it can be described as well by Mayadas’s theory using the grain boundary reflectivity R as the only adjustable parameter.
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Work supported by FONDECYT under Contract No. 1085026.
Identifier
URI: https://repositorio.uchile.cl/handle/2250/119229
ISSN: 1098-0121
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PHYSICAL REVIEW B, Volume: 82, Issue: 11, Article Number: 113409, 2010
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